Stretchable electronics have recently emerged as an important technology for the realization of next-generation electronic applications. Device elasticity under tensile stress, i.e., stretchability, beyond flexibility and bendability, is required in a wide range of future electronic applications. Despite the considerable efforts applied toward developing stretchable electronics, few intrinsically stretchable semiconductors have been reported that retain the original electrical characteristics under stretching. For these reasons, stretchable electronic devices, which consist solely of intrinsically stretchable materials, need to be developed as the ultimate concept device.
  Our studies introduces an intrinsically stretchable and transparent organic semiconducting layer by blending self-assembled organic semiconductor with an elastomeric and transparent polymer substrate. The stretchable and transparent active material was designed to have the structure of 1D organic semiconducting nanowire (NW) networks embedded in a transparent elastomeric matrix, which was demonstrated by blending self-assembled poly(3-hexylthiophene) (P3HT) NWs with poly(dimethylsiloxane) (PDMS). Compared to the homo-P3HT NWs, the blends were more suitable as active materials in OTFTs by systematically investigating the morphologies, crystalline structures, and electrical properties of blends with various P3HT contents .